Catalogue / Power semiconductors (IGBT, SiC, thyristors)
IGBT power module, Elite seriesSample
by Neeltron Electronic Components (Sample) · verified by BARREL
Price for verified buyers
Ordered and invoiced through BARREL — one contract, one GST invoice.
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Neeltron Elite IGBT power module, offered in 6 rating options from 1200 V / 75 A to 4500 V / 1200 A. Highlights: short-circuit rated for 10 µs, isolated baseplate for easy heatsink mounting and alSiC baseplate option for traction duty. Suited to HVDC and FACTS valves, variable frequency drives and solar and wind inverters. Designed and tested to IEC 60747-9, IEC 60747-2 and IEC 60747-6. Lead time 4-8 weeks; delivers to West India. Sample listing: illustrative data for testing BARREL Shop, not a real offer.
- Brand
- Neeltron
- Model
- NEE-881 series
- Listing type
- Product
- Unit
- nos
- Minimum order
- 1 nos
- Lead time
- 4-8 weeks
- Warranty
- 12 months from supply
- Standards
- IEC 60747-9, IEC 60747-2, IEC 60747-6
- Delivers to
- West India
- GST rate
- 18 %
- Country of origin
- India
- Packaging
- Drum / reel with end caps
- Delivery terms
- FOR nearest railhead
- Returns
- Replacement of items damaged in transit within 7 days
- Other terms
- Sample data for testing; not a real offer.
Variants
| Variant | Specifications | Min. order · lead time | Price, ex GST |
|---|---|---|---|
| Rating1200 V / 75 ANEE-881-01 | Rating: 1200 V / 75 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1200 V / 150 ANEE-881-02 | Rating: 1200 V / 150 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1200 V / 300 ANEE-881-03 | Rating: 1200 V / 300 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1700 V / 450 ANEE-881-04 | Rating: 1700 V / 450 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating3300 V / 800 ANEE-881-05 | Rating: 3300 V / 800 A | 1 nos · 12-20 weeks | for verified buyers |
| Rating4500 V / 1200 ANEE-881-06 | Rating: 4500 V / 1200 A | 1 nos · 12-20 weeks | for verified buyers |
Specifications
| Rating | 1200 V / 75 A to 4500 V / 1200 A (see variants) |
|---|---|
| Device type | SiC MOSFET |
| Topology | Choppermade to order: Half-bridge / Six-pack |
| Package | Press-packmade to order: 62 mm / EconoDUAL / TO-247 |
| Isolation voltage | 2.5 kV |
| Junction temperature | 175 °Cmade to order: 150 °C |
| VCE(sat) | 1.7 V |
| Switching frequency | Up to 20 kHz |
| Baseplate | Coppermade to order: AlSiC |
| NTC sensor | Integrated |
| Mounting | Screw |
| Reverse diode | Anti-parallel fast |