Power semiconductors (IGBT, SiC, thyristors)Ohmmax6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Ohmmax · OHM-7E7 series
- Rating
- 600 V / 50 A to 3300 V / 800 A (see variants)
- Device type
- Phase control SCR
- Topology
- Half-bridge
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Indraprasthafaraday5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Indraprasthafaraday · IND-888 series
- Rating
- 1200 V / 75 A to 3300 V / 800 A (see variants)
- Device type
- Trench IGBT
- Topology
- Six-pack
- Package
- 62 mm
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 24 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Tirhutohm5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Tirhutohm · TIR-881 series
- Rating
- 600 V / 50 A to 1700 V / 450 A (see variants)
- Device type
- Trench IGBT
- Topology
- Half-bridge
- Package
- Press-pack
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Neeltron4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Neeltron · NEE-816 series
- Rating
- 1200 V / 300 A to 4500 V / 1200 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Half-bridge
- Package
- EconoDUAL
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 2 nos
Power semiconductors (IGBT, SiC, thyristors)Satpura4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Satpura · SAT-884 series
- Rating
- 600 V / 50 A to 1200 V / 300 A (see variants)
- Device type
- Phase control SCR
- Topology
- Six-pack
- Package
- TO-247
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Marwar6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Marwar · MAR-7E9 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Chopper
- Package
- EconoDUAL
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 24 months from supply · MOQ 10 nos
Power semiconductors (IGBT, SiC, thyristors)Tirhutohm6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Tirhutohm · TIR-7E2 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Phase control SCR
- Topology
- Six-pack
- Package
- Press-pack
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Chola3 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Chola · CHO-814 series
- Rating
- 600 V / 50 A to 1200 V / 150 A (see variants)
- Device type
- Trench IGBT
- Topology
- Chopper
- Package
- TO-247
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Satpura3 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Satpura · SAT-815 series
- Rating
- 1700 V / 450 A to 4500 V / 1200 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Six-pack
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 10 nos
Power semiconductors (IGBT, SiC, thyristors)Kaveri5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Kaveri · KAV-501 series
- Rating
- 1200 V / 150 A to 4500 V / 1200 A (see variants)
- Device type
- Phase control SCR
- Topology
- Chopper
- Package
- Press-pack
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 24 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Indraprasthafaraday5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Indraprasthafaraday · IND-036 series
- Rating
- 1200 V / 75 A to 3300 V / 800 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Six-pack
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Satpura5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Satpura · SAT-509 series
- Rating
- 1200 V / 75 A to 3300 V / 800 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Six-pack
- Package
- EconoDUAL
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Chola5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Chola · CHO-505 series
- Rating
- 1200 V / 75 A to 3300 V / 800 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Half-bridge
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 10 nos
Power semiconductors (IGBT, SiC, thyristors)Marwar4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Marwar · MAR-812 series
- Rating
- 1200 V / 150 A to 3300 V / 800 A (see variants)
- Device type
- Phase control SCR
- Topology
- Chopper
- Package
- TO-247
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 10 nos
Power semiconductors (IGBT, SiC, thyristors)Ohmmax4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Ohmmax · OHM-817 series
- Rating
- 1200 V / 150 A to 3300 V / 800 A (see variants)
- Device type
- Phase control SCR
- Topology
- Half-bridge
- Package
- Press-pack
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 2 nos
Power semiconductors (IGBT, SiC, thyristors)Chola5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Chola · CHO-038 series
- Rating
- 1200 V / 150 A to 4500 V / 1200 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Half-bridge
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 2 nos
Power semiconductors (IGBT, SiC, thyristors)Marwar3 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Marwar · MAR-509 series
- Rating
- 600 V / 50 A to 1200 V / 150 A (see variants)
- Device type
- Trench IGBT
- Topology
- Chopper
- Package
- 62 mm
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Tirhutohm6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Tirhutohm · TIR-504 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Trench IGBT
- Topology
- Chopper
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Sparkgen4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Sparkgen · SPA-7E9 series
- Rating
- 1200 V / 150 A to 3300 V / 800 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Six-pack
- Package
- EconoDUAL
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Krishna6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Krishna · KRI-7E1 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Six-pack
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Krishna5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Krishna · KRI-886 series
- Rating
- 1200 V / 150 A to 4500 V / 1200 A (see variants)
- Device type
- Phase control SCR
- Topology
- Half-bridge
- Package
- EconoDUAL
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 24 months from supply · MOQ 5 nos
Power semiconductors (IGBT, SiC, thyristors)Kaveri4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Kaveri · KAV-885 series
- Rating
- 1200 V / 150 A to 3300 V / 800 A (see variants)
- Device type
- Trench IGBT
- Topology
- Chopper
- Package
- TO-247
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 10 nos
Power semiconductors (IGBT, SiC, thyristors)Tirhutohm3 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Tirhutohm · TIR-032 series
- Rating
- 1200 V / 300 A to 3300 V / 800 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Half-bridge
- Package
- Press-pack
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 5 nos
Power semiconductors (IGBT, SiC, thyristors)Sparkgen6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Sparkgen · SPA-031 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Trench IGBT
- Topology
- Half-bridge
- Package
- 62 mm
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 1 nos