Catalogue / Power semiconductors (IGBT, SiC, thyristors)
Fast recovery diode module, Ultra seriesSample
by Satpura Electronics (Sample) · verified by BARREL
Price for verified buyers
Ordered and invoiced through BARREL — one contract, one GST invoice.
Customise and request quoteMade to order: change the marked specification rows to what you need; Satpura Electronics (Sample) quotes for it.
Or send an open RFQ to every matching merchant.
Register your company to see prices.
Satpura Ultra fast recovery diode module, offered in 5 rating options from 1200 V / 75 A to 3300 V / 800 A. Design: integrated NTC temperature sensor, short-circuit rated for 10 µs and low conduction and switching losses. Used by variable frequency drives, UPS and BESS converters and solar and wind inverters. Designed and tested to IEC 60747-9, IEC 60747-2 and IEC 60747-6. Lead time 4-8 weeks; delivers to All India. Sample listing: illustrative data for testing BARREL Shop, not a real offer.
- Brand
- Satpura
- Model
- SAT-509 series
- Listing type
- Product
- Unit
- nos
- Minimum order
- 1 nos
- Lead time
- 4-8 weeks
- Warranty
- 12 months from supply
- Standards
- IEC 60747-9, IEC 60747-2, IEC 60747-6
- Delivers to
- All India
- GST rate
- 18 %
- Country of origin
- India
- Packaging
- Wooden crate, seaworthy
- Delivery terms
- Ex-works, freight extra at actuals
- Returns
- Replacement of items damaged in transit within 7 days
- Other terms
- Sample data for testing; not a real offer.
Variants
| Variant | Specifications | Min. order · lead time | Price, ex GST |
|---|---|---|---|
| Rating1200 V / 75 ASAT-509-01 | Rating: 1200 V / 75 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1200 V / 150 ASAT-509-02 | Rating: 1200 V / 150 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1200 V / 300 ASAT-509-03 | Rating: 1200 V / 300 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1700 V / 450 ASAT-509-04 | Rating: 1700 V / 450 A | 1 nos · 12-20 weeks | for verified buyers |
| Rating3300 V / 800 ASAT-509-05 | Rating: 3300 V / 800 A | 1 nos · 12-20 weeks | for verified buyers |
Specifications
| Rating | 1200 V / 75 A to 3300 V / 800 A (see variants) |
|---|---|
| Device type | SiC MOSFETmade to order: Trench IGBT / Phase control SCR |
| Topology | Six-packmade to order: Half-bridge / Chopper |
| Package | EconoDUALmade to order: 62 mm / Press-pack / TO-247 |
| Isolation voltage | 2.5 kVmade to order: 4 kV |
| Junction temperature | 150 °C |
| VCE(sat) | 2.0 V |
| Switching frequency | Up to 100 kHz (SiC)made to order: Up to 20 kHz |
| Baseplate | Coppermade to order: AlSiC |
| NTC sensor | Integrated |
| Mounting | Press-fitmade to order: Screw |
| Reverse diode | Anti-parallel fast |