Catalogue / Power semiconductors (IGBT, SiC, thyristors)
SiC MOSFET power module, Edge seriesSample
by Tirhutohm Electronics (Sample) · verified by BARREL
Price for verified buyers
Ordered and invoiced through BARREL — one contract, one GST invoice.
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Tirhutohm Edge siC MOSFET power module, offered in 6 rating options from 1200 V / 75 A to 4500 V / 1200 A. Design: short-circuit rated for 10 µs, low stray inductance housing and alSiC baseplate option for traction duty. Typically used for variable frequency drives, UPS and BESS converters and HVDC and FACTS valves. Designed and tested to IEC 60747-9, IEC 60747-2 and IEC 60747-6. Lead time 4-8 weeks; delivers to East & North-East India. Sample listing: illustrative data for testing BARREL Shop, not a real offer.
- Brand
- Tirhutohm
- Model
- TIR-7E2 series
- Listing type
- Product
- Unit
- nos
- Minimum order
- 1 nos
- Lead time
- 4-8 weeks
- Warranty
- 24 months from supply
- Standards
- IEC 60747-9, IEC 60747-2, IEC 60747-6
- Delivers to
- East & North-East India
- GST rate
- 18 %
- Country of origin
- India
- Packaging
- Wooden crate, seaworthy
- Delivery terms
- FOR nearest railhead
- Returns
- Replacement of items damaged in transit within 7 days
- Other terms
- Sample data for testing; not a real offer.
Variants
| Variant | Specifications | Min. order · lead time | Price, ex GST |
|---|---|---|---|
| Rating1200 V / 75 ATIR-7E2-01 | Rating: 1200 V / 75 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1200 V / 150 ATIR-7E2-02 | Rating: 1200 V / 150 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1200 V / 300 ATIR-7E2-03 | Rating: 1200 V / 300 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating1700 V / 450 ATIR-7E2-04 | Rating: 1700 V / 450 A | 1 nos · 4-8 weeks | for verified buyers |
| Rating3300 V / 800 ATIR-7E2-05 | Rating: 3300 V / 800 A | 1 nos · 12-20 weeks | for verified buyers |
| Rating4500 V / 1200 ATIR-7E2-06 | Rating: 4500 V / 1200 A | 1 nos · 12-20 weeks | for verified buyers |
Specifications
| Rating | 1200 V / 75 A to 4500 V / 1200 A (see variants) |
|---|---|
| Device type | Phase control SCRmade to order: Trench IGBT / SiC MOSFET |
| Topology | Six-pack |
| Package | Press-packmade to order: 62 mm / EconoDUAL / TO-247 |
| Isolation voltage | 2.5 kV |
| Junction temperature | 175 °C |
| VCE(sat) | 1.7 Vmade to order: 2.0 V |
| Switching frequency | Up to 100 kHz (SiC)made to order: Up to 20 kHz |
| Baseplate | Copper |
| NTC sensor | Integrated |
| Mounting | Press-fitmade to order: Screw |
| Reverse diode | Anti-parallel fast |