Catalogue / Power semiconductors (IGBT, SiC, thyristors)
IGBT driver board, Volt 7 seriesSample
by Neeltron Electronic Components (Sample) · verified by BARREL
Price for verified buyers
Ordered and invoiced through BARREL — one contract, one GST invoice.
Customise and request quoteMade to order: change the marked specification rows to what you need; Neeltron Electronic Components (Sample) quotes for it.
Or send an open RFQ to every matching merchant.
Register your company to see prices.
The Volt 7 range of IGBT driver board by Neeltron covers 4 rating options (1200 V / 300 A to 4500 V / 1200 A). Highlights: isolated baseplate for easy heatsink mounting, alSiC baseplate option for traction duty and short-circuit rated for 10 µs. Suited to variable frequency drives, HVDC and FACTS valves and UPS and BESS converters. Designed and tested to IEC 60747-9, IEC 60747-2 and IEC 60747-6. Lead time 4-8 weeks; delivers to West India. Sample listing: illustrative data for testing BARREL Shop, not a real offer.
- Brand
- Neeltron
- Model
- NEE-816 series
- Listing type
- Product
- Unit
- nos
- Minimum order
- 2 nos
- Lead time
- 4-8 weeks
- Warranty
- 12 months from supply
- Standards
- IEC 60747-9, IEC 60747-2, IEC 60747-6
- Delivers to
- West India
- GST rate
- 18 %
- Country of origin
- India (imported sub-assemblies)
- Packaging
- Drum / reel with end caps
- Delivery terms
- Door delivery in metro cities
- Returns
- Returns within 15 days if unused, in original packing
- Other terms
- Sample data for testing; not a real offer.
Variants
| Variant | Specifications | Min. order · lead time | Price, ex GST |
|---|---|---|---|
| Rating1200 V / 300 ANEE-816-01 | Rating: 1200 V / 300 A | 2 nos · 4-8 weeks | for verified buyers |
| Rating1700 V / 450 ANEE-816-02 | Rating: 1700 V / 450 A | 2 nos · 4-8 weeks | for verified buyers |
| Rating3300 V / 800 ANEE-816-03 | Rating: 3300 V / 800 A | 2 nos · 12-20 weeks | for verified buyers |
| Rating4500 V / 1200 ANEE-816-04 | Rating: 4500 V / 1200 A | 2 nos · 12-20 weeks | for verified buyers |
Specifications
| Rating | 1200 V / 300 A to 4500 V / 1200 A (see variants) |
|---|---|
| Device type | SiC MOSFET |
| Topology | Half-bridge |
| Package | EconoDUALmade to order: 62 mm / Press-pack / TO-247 |
| Isolation voltage | 2.5 kV |
| Junction temperature | 150 °C |
| VCE(sat) | 2.0 Vmade to order: 1.7 V |
| Switching frequency | Up to 100 kHz (SiC) |
| Baseplate | AlSiC |
| NTC sensor | Integrated |
| Mounting | Screw |
| Reverse diode | Anti-parallel fast |