Power semiconductors (IGBT, SiC, thyristors)Krishna6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Krishna · KRI-817 series
- Rating
- 600 V / 50 A to 3300 V / 800 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Chopper
- Package
- EconoDUAL
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 5 nos
Power semiconductors (IGBT, SiC, thyristors)Sparkgen6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Sparkgen · SPA-508 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Phase control SCR
- Topology
- Chopper
- Package
- TO-247
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Kaveri6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Kaveri · KAV-7E3 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Trench IGBT
- Topology
- Six-pack
- Package
- EconoDUAL
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 5 nos
Power semiconductors (IGBT, SiC, thyristors)Ohmmax4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Ohmmax · OHM-037 series
- Rating
- 1200 V / 75 A to 1700 V / 450 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Chopper
- Package
- EconoDUAL
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 2 nos
Power semiconductors (IGBT, SiC, thyristors)Neeltron3 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Neeltron · NEE-505 series
- Rating
- 1700 V / 450 A to 4500 V / 1200 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Six-pack
- Package
- TO-247
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Marwar5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Marwar · MAR-039 series
- Rating
- 600 V / 50 A to 1700 V / 450 A (see variants)
- Device type
- Trench IGBT
- Topology
- Six-pack
- Package
- Press-pack
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 10 nos
Power semiconductors (IGBT, SiC, thyristors)Munnar4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Munnar · MUN-882 series
- Rating
- 1200 V / 300 A to 4500 V / 1200 A (see variants)
- Device type
- Trench IGBT
- Topology
- Chopper
- Package
- TO-247
- Isolation voltage
- 2.5 kV
Lead time 12-20 weeks · Warranty 24 months from supply · MOQ 10 nos
Power semiconductors (IGBT, SiC, thyristors)Ohmmax6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Ohmmax · OHM-885 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Phase control SCR
- Topology
- Half-bridge
- Package
- TO-247
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 5 nos
Power semiconductors (IGBT, SiC, thyristors)Kaveri5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Kaveri · KAV-037 series
- Rating
- 600 V / 50 A to 1700 V / 450 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Chopper
- Package
- TO-247
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 24 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Munnar6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Munnar · MUN-7E1 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Phase control SCR
- Topology
- Half-bridge
- Package
- EconoDUAL
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 5 nos
Power semiconductors (IGBT, SiC, thyristors)Neeltron5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Neeltron · NEE-7E4 series
- Rating
- 1200 V / 75 A to 3300 V / 800 A (see variants)
- Device type
- Trench IGBT
- Topology
- Half-bridge
- Package
- Press-pack
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Indraprasthafaraday5 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Indraprasthafaraday · IND-817 series
- Rating
- 600 V / 50 A to 1700 V / 450 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Chopper
- Package
- EconoDUAL
- Isolation voltage
- 4 kV
Lead time 12-20 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Sparkgen6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Sparkgen · SPA-818 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- Phase control SCR
- Topology
- Chopper
- Package
- TO-247
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Indraprasthafaraday3 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Indraprasthafaraday · IND-504 series
- Rating
- 1200 V / 75 A to 1200 V / 300 A (see variants)
- Device type
- Phase control SCR
- Topology
- Chopper
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 24 months from supply · MOQ 5 nos
Power semiconductors (IGBT, SiC, thyristors)Munnar4 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Munnar · MUN-039 series
- Rating
- 1200 V / 150 A to 3300 V / 800 A (see variants)
- Device type
- Phase control SCR
- Topology
- Half-bridge
- Package
- 62 mm
- Isolation voltage
- 4 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 1 nos
Power semiconductors (IGBT, SiC, thyristors)Neeltron6 variants
SamplePower semiconductors (IGBT, SiC, thyristors) Neeltron · NEE-881 series
- Rating
- 1200 V / 75 A to 4500 V / 1200 A (see variants)
- Device type
- SiC MOSFET
- Topology
- Chopper
- Package
- Press-pack
- Isolation voltage
- 2.5 kV
Lead time 4-8 weeks · Warranty 12 months from supply · MOQ 1 nos